Tīmeklis2024. gada 10. janv. · Farzan Jazaeri; Christian Enz; Publication date January 10, 2024. Publisher 'Institute of Electrical and Electronics Engineers (IEEE)' Doi DOI: … TīmeklisFarzan Jazaeri; Lucian Barbut; Jean-Michel Sallese. In this paper, we investigate the technological constrains and design limitations of ultrathin body junctionless double …
Reliability and Modeling in Harsh Environments for Space Applications
TīmeklisFarzan Jazaeri and Jean-Michel Sallese, “Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors,” Cambridge University Press, April 2024. 2. A. Beckers, F. Jazaeri, et al. " Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures," Solid state electronics, 2024. ... TīmeklisThe first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, … quickhoof wow
Reliability and Modeling in Harsh Environments for Space …
TīmeklisAli Saeidi, Farzan Jazaeri, Igor Stolichnov et al.-Process and device integration for silicon tunnel FETs utilizing isoelectronic trap technology to enhance the ON current Takahiro Mori, Hidehiro Asai, Koichi Fukuda et al.-Device operation and physical mechanism of asymmetric junctionless tunnel field-effect transistors designed to … TīmeklisFarzan Jazayeri Expand search. This button displays the currently selected search type. When expanded it provides a list of search options that will switch the search inputs … TīmeklisCambridge University Press 978-1-107-16204-4 — Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors Farzan Jazaeri , Jean-Michel Sallese quickhook dating